| 1. | An empirical direct tunneling current expression for ultra - thin oxide nmosfets
器件的直接隧穿电流经验公式 |
| 2. | The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用衬底热电子注入技术，正电荷辅助隧穿电流可被大大的减弱。 |
| 3. | The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same
若两侧的铁磁层磁性方向相反，穿隧电流就被挡住，反之则可通过。 |
| 4. | In order to resolve the questions , a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current
目前，正在利用介电常数较大的材料来代替传统的sio _ 2作为栅介材料，来减少隧穿电流。 |
| 5. | It provided a in - depth discussion about the mechanism of tunneling effect as well as the i - v relation and the expression of tunneling current based on the model of metal - insulator - metal
对隧道效应理论进行了深入探讨，并以金属?绝缘层?金属结为模型，讨论了隧道效应中的i ? v关系以及针尖一样品间的隧道电流表达式。 |
| 6. | So a conclusion can be got that the annealing in n2 raises the la2o2 , stability . 3 . the exact solution and wkb approximation are compared , the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current , but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure , while the exact algorithm can give a exact result
比较了wkb和精确解法计算栅介质隧穿电流的方法，精确解法在解决单sio _ 2层和wkb准经典近似有相同的结果，但是wkb不适合计算la _ 2o _ 3 / sio _ 2双层栅介层的隧穿电流，而精确解法能精确地计算双层栅介质隧穿电流。 |
| 7. | The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition . the influence of the thickness of sio2 and la2o3 on the tunneling current is given to compare much different thickness of sio2 and la2o3 tunneling current on the same equivalent oxide thickness ( eot ) condition
在等效氧化层厚度相同的情况下，比较了几种不同的sio _ 2层厚度和la _ 2o _ 3层厚度结构的隧穿电流的大小，给出了sio _ 2层厚度和la _ 2o _ 3层厚度对隧穿电流的影响。 |
